Highly efficient blue organic light-emitting devices using oligo(phenylenevinylene) dimers as an emitting layerGANG CHENG; FENG HE; YI ZHAO et al.Semiconductor science and technology. 2004, Vol 19, Num 7, pp L78-L80, issn 0268-1242Article

Trap-controlled hopping in doubly doped organic photoreceptor layersVERES, J; JUHASZ, C.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1997, Vol 75, Num 3, pp 377-387, issn 1364-2812Article

Effect of polymer matrices on charge transport in molecularly doped polymersHIRAO, A; NISHIZAWA, H; SUGIUCHI, M et al.Journal of applied physics. 1993, Vol 74, Num 2, pp 1083-1085, issn 0021-8979Article

Hole transport in tri-p-tolylamine-doped bisphenol-A-polycarbonateBORSENBERGER, P. M.Journal of applied physics. 1990, Vol 68, Num 12, pp 6263-6273, issn 0021-8979, 11 p.Article

Synthesis and field-effect properties of α,ω-disubstituted sexithiophenes bearing polar groupsDELL'AQUILA, Antonio; MASTRORILLI, Piero; FRANCESCO NOBILE, Cosimo et al.Journal of material chemistry. 2006, Vol 16, Num 12, pp 1183-1191, issn 0959-9428, 9 p.Article

High-mobility doped polymersBORSENBERGER, P. M; GRUENBAUM, W. T; SORRIERO, L. J et al.Japanese journal of applied physics. 1995, Vol 34, Num 12A, pp L1597-L1598, issn 0021-4922, 2Article

Tuning hole transport in a highly dispersed blend of chemically similar polyfluorene copolymersHARDING, M. James; MAHER, Robert C; COHEN, Lesley F et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 633314.1-633314.8, issn 0277-786X, isbn 0-8194-6412-0, 1VolConference Paper

In-plane mobility anisotropy and universality under uni-axial strains in n- and p-MOS inversion layers on (100), (110), and (111) SiIRIE, H; KITA, K; KYUNO, K et al.International Electron Devices Meeting. 2004, pp 225-228, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gateCHI ON CHUI; KIM, Hyoungsub; CHI, David et al.IEDm : international electron devices meeting. 2002, pp 437-440, isbn 0-7803-7462-2, 4 p.Conference Paper

Impact ionisation in strained SiGe pMOSFETsNICHOLAS, G; DOBBIE, A; GRASBY, T. J et al.Electronics Letters. 2005, Vol 41, Num 16, pp 925-927, issn 0013-5194, 3 p.Article

Examination of hole mobility in ultra-thin body SOI MOSFETsREN, Zhibin; SOLOMON, Paul M; HAENSCH, Wilfried et al.IEDm : international electron devices meeting. 2002, pp 51-54, isbn 0-7803-7462-2, 4 p.Conference Paper

Hole transport in microcrystalline chlorophyll aKASSI, H; HOTCHANDANI, S; LEBLANC, R. M et al.Applied physics letters. 1993, Vol 62, Num 18, pp 2283-2285, issn 0003-6951Article

Photocarrier generation and transport in σ-bonded polysilanesKEPLER, R. G; ZEIGLER, J. M; HARRAH, L. A et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 6, pp 2818-2822, issn 0163-1829Article

Rapid long-distance hole transfer through consecutive adenine sequenceTAKADA, Tadao; KAWAI, Kiyohiko; FUJITSUKA, Mamoru et al.Journal of the American Chemical Society. 2006, Vol 128, Num 34, pp 11012-11013, issn 0002-7863, 2 p.Article

Localized state effects in polymer thin film transistorsSTREET, R. A; SALLEO, A; CHABINYC, M et al.Journal of non-crystalline solids. 2004, Vol 338-40, pp 607-611, issn 0022-3093, 5 p.Conference Paper

Hole transport in polysilanes with diverse side-chain subsztituentsDOHMARU, T; OKA, K; YAJIMA, T et al.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1995, Vol 71, Num 6, pp 1069-1081, issn 0958-6644Article

Effects of gadolinium doping on electrical properties of UO₂ grain boundariesKUBO, T; ISHIMOTO, S; KOYAMA, T et al.Journal of Nuclear Science and Technology. 1993, Vol 30, Num 7, pp 664-672, issn 0022-3131Article

The influence of polarization on hole transport in plasma-polymerized organosilicon filmsSIELSKI, J; KRYSZEWSKI, M.IEEE transactions on electrical insulation. 1992, Vol 27, Num 4, pp 687-690, issn 0018-9367Conference Paper

Hole diffusion in triarylamine polymer films in a contacting electrolyte. Initial comparison with hole mobilitiesFACCI, J. S; ABKOWITZ, M; LIMBURG, W et al.Journal of physical chemistry (1952). 1991, Vol 95, Num 20, pp 7908-7914, issn 0022-3654Article

Hole transport in a molecularly doped polymer: p-diethylaminobenzaldehyde-diphenyl hydrazone in polycarbonateSCHEIN, L. B; ROSENBERG, A; RICE, S. L et al.Journal of applied physics. 1986, Vol 60, Num 12, pp 4287-4292, issn 0021-8979Article

Electron and hole mobility enhancements in sub-10 nm-thick strained silicon directly on insulator fabricated by a bond and etch-back techniqueABERG, I; OLUBUYIDE, O. O; NI CHLEIRIGH, C et al.Symposium on VLSI Technology. sd, pp 52-53, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper

The effect of dopant concentration on the mobility of a triphenylmethane doped polymerMAGIN, E. H; GRUENBAUM, W. T; BORSENBERGER, P. M et al.Japanese journal of applied physics. 1996, Vol 35, Num 7, pp 3930-3936, issn 0021-4922, 1Article

Hole transport in triarylamine doped polymersHEUN, S; BORSENBERGER, P. M.Physica. B, Condensed matter. 1995, Vol 216, Num 1-2, pp 43-52, issn 0921-4526Article

Time-resolved observation of excitation hopping between two anthryl moieties attached to both ends of polystyrene chainsIKEDA, T; BONG LEE; USHIKI, H et al.The Journal of chemical physics. 1991, Vol 95, Num 9, pp 6877-6884, issn 0021-9606Article

Hole transport in organic polymers with silicon backbone (polysilylenes)STOLKA, M; YUH, H.-J; MCGRANE, K et al.Journal of polymer science. Part A. Polymer chemistry. 1987, Vol 25, Num 3, pp 823-827, issn 0887-624XArticle